Properties of MSZ Thin Films for SOFC Grown by PECVD.
نویسندگان
چکیده
منابع مشابه
architecture and engineering of nanoscale sculptured thin films and determination of their properties
چکیده ندارد.
15 صفحه اولProperties of SnS thin films grown by physical vapour deposition
Thin films of tin sulfide (SnS) were prepared by thermal evaporation technique on glass substrates and on n-type Si substrate and their physical properties were studied. The phase of the obtained thin films before and after thermal treatment was confirmed by X-ray diffraction analysis and Raman spectra. Optical transmission and reflection spectra were measured in the wavelength range 300-1800 n...
متن کاملThin crystalline silicon solar cells based on epitaxial films grown at 165°C by RF-PECVD
We report on heterojunction solar cells whose thin intrinsic crystalline absorber layer has been obtained by plasma enhanced chemical vapor deposition at 165°C on highly doped p-type (100) crystalline silicon substrates. We have studied the effect of the epitaxial intrinsic layer thickness in the range from 1 to 2.4 μm. This absorber is responsible for photo-generated current whereas highly dop...
متن کاملNon-fouling thin polymeric films synthesized by PECVD
Polymeric films have been synthesized by a conventional PECVD technique at low temperature on COC substrates. Depending on the precursors chemistry and process conditions non-fouling property has been obtained which was correlated to chemical bonds similar to PEO/PEG bonds. The deposition process doesn’t involve any fragmentation of usual PEO/PEG precursors as mentioned in the literature but th...
متن کاملFormation of Ge nanocrystals and SiGe in PECVD grown SiNx:Ge thin films
Formation of Ge nanocrystals in SiNx matrices has been studied using plasma enhanced chemical vapor deposition in both as deposited samples as well as in post-vacuum annealed samples. Low temperature and short duration anneals in vacuum resulted in Ge nanocrystals whereas prolonged anneals at higher temperatures resulted in Ge nanocrystals accompanied with SiGe formation at the SiNx/Si interfac...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: SHINKU
سال: 1998
ISSN: 0559-8516,1880-9413
DOI: 10.3131/jvsj.41.186